BYT230Y-400 october 1999 - ed: 3a fast recovery rectifier diodes ? dual 400v rectifiers suited for switch mode power supplies and other converters. packaged in max247, this device is also intended for use in welding equipment and telecom power supplies. description very low reverse recovery time very low switching losses low noise turn-off switching features and benefits symbol parameter value unit v rrm repetitive peak reverse voltage 400 v i frm repetitive peak forward current tp=5 m s f=5khz 380 a i f(rms) rms forward current 50 a i f(av) average forward current tc = 105 c d = 0.5 per diode 30 a per device 60 i fsm surge non repetitive forward current tp = 10 ms sinusoidal 300 a t stg storage temperature range - 55 to + 150 c tj maximum operating junction temperature 150 c absolute ratings (limiting values, per diode) i f(av) 2 x 30 a v rrm 400 v tj (max) 150c v f (max) 1.3 v main product characteristics a1 k a2 max247 preliminary datashhet a1 k a2 1/5
symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current tj = 25 cv r = v rrm 35 m a tj = 125 c 312ma v f ** forward voltage drop tj = 25 ci f = 30 a 1.5 v tj = 125 ci f = 30 a 0.9 1.3 tj = 25 ci f = 60 a 1.7 tj = 125 ci f = 60 a 1.1 1.6 pulse test : * tp = 5 ms, d < 2% ** tp = 380 m s, d < 2% static electrical characteristics (per diode) symbol parameter value unit r th (j-c) junction to case per diode total 0.95 0.55 c/w r th(c) coupling 0.15 c/w thermal resistances when the diodes 1 and 2 are used simultaneously : d tj(diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode 2) x r th(c) to evaluate the conduction losses use the following equation: p = 1.0 x i f(av) + 0.01 i f 2 (rms) symbol test conditions min. typ. max. unit t rr t j = 25c i f = 0.5a i r = 1a i rr = 0.25a 50 ns i f = 1a v r = 30v di f /dt = - 15a/ m s 100 recovery characteristics symbol test conditions min. typ. max. unit t irm di f /dt = - 120a/ m sv cc = 200 v i f = 30a l p = 0.05 m h t j = 100c 75 ns di f /dt = - 240a/ m s 50 i rm di f /dt = - 120a/ m s 9a di f /dt = - 240a/ m s 12 turn-off switching characteristics (without serie inductance) symbol test conditions min. typ. max. unit c = v rp v cc t j = 100c v cc = 60v i f = i f (av) di f /dt = - 30a/ m s l p = 1 m h 3.3 / turn-off overvoltage corfficient (with serie inductance) BYT230Y-400 2/5
0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 pf(av)(w) if(av) (a) t d =tp/t tp d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 1 fig. 1: average forward power dissipation versus average forward current (per diode). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 50 100 150 200 250 im(a) p=40w p=80w p=60w p=20w t d =tp/t tp fig. 2: peak current versus form factor (per diode). 1e-3 1e-2 1e-1 1e+0 0 50 100 150 200 250 im(a) tc=50c tc=110c tc=75c t(s) i m t d =0.5 fig. 4: non repetitive surge peak forward current versus overload duration ( per diode). 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 if(av)(a) rth(j-a)=5c/w rth(j-a)=rth(j-c) tamb(c) t d =tp/t tp fig. 3: average forward current versus ambient temperature ( d =0.5, per diode). 1e-3 1e-2 1e-1 1e+0 0.1 1.0 k=[zth(j-c)/rth(j-c)] tp(s) single pulse d = 0.5 d = 0.2 d = 0.1 t d =tp/t tp fig. 5: relative variation of thermal impedance junction to case versus pulse duration (per diode). 0.0 0.5 1.0 1.5 2.0 2.5 0.1 1.0 10.0 100.0 200.0 ifm(a) typical values tj=125c tj=25c tj=125c vfm(v) fig. 6: forward voltage drop versus forward current (maximum values, per diode). BYT230Y-400 3/5
10 20 50 100 200 500 1 10 50 irm(a) dif/dt(a/s) if=if(av) 90% confidence tj=100c fig. 9: recovery current versus di f /dt (per diode). 1 10 100 200 10 20 50 100 vr(v) c(pf) f=1mhz tj=25c fig. 7: junction capacitance versus reverse voltage applied (typical values, per diode). 10 20 50 100 200 500 10 100 1000 qrr(nc) if=if(av) 90% confidence tj=100c dif/dt(a/s) fig. 8: recovery charges versus di f /dt (per diode). 0 100 200 300 400 500 0 5 10 15 20 25 30 vfp(v) if=if(av) 90% confidence tj=100c dif/dt(a/s) fig. 10: transient peak forward versus di f /dt (per diode). 0 100 200 300 400 500 0.00 0.25 0.50 0.75 1.00 1.25 1.50 tfr(s) dif/dt(a/s) if=if(av) 90% confidence tj=100c fig. 11: forward recovery time versus di f /dt (per diode). 0 25 50 75 100 125 150 0.25 0.50 0.75 1.00 1.25 1.50 qrr;irm[tj] / qrr;irm[tj=100c] irm qrr tj(c) fig. 12: dynamic parameters versus junction temperature. BYT230Y-400 4/5
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